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NP55N04SLG Datasheet

Part Number NP55N04SLG
Manufacturers Renesas
Logo Renesas
Description MOS FIELD EFFECT TRANSISTOR
Datasheet NP55N04SLG DatasheetNP55N04SLG Datasheet (PDF)

NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protecti.

  NP55N04SLG   NP55N04SLG






MOS FIELD EFFECT TRANSISTOR

NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD PLATING PACKING NP55N04SLG-E1-AY ∗1 NP55N04SLG-E2-AY ∗1 Pure Sn (Tin) Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Package TO-252 (MP-3ZK) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±55 ±220 77 1.2 175 −55 to +175 30 90 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 1.95 °C/W 125 °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V R07DS0242EJ0100 Rev..


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