NP55N04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Channel temperature 175 degree rating • Super low on-state resistance
⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protecti.
MOS FIELD EFFECT TRANSISTOR
NP55N04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Channel temperature 175 degree rating • Super low on-state resistance
⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP55N04SLG-E1-AY ∗1 NP55N04SLG-E2-AY ∗1
Pure Sn (Tin)
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature
Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 ±20 ±55
±220 77 1.2 175
−55 to +175 30 90
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2
Rth(ch-C) Rth(ch-A)
1.95 °C/W 125 °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
R07DS0242EJ0100 Rev..