NP82N04NLG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MLG, NP82N04NLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MLG and NP82N04NLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MLG-S18-AY Note NP82N04NLG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g FEATURES Logic level Built-in gate protection diode Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) High current rating ID(DC) = ±82 A Low input capacitance Ciss = 6000 pF TYP. Designed for automotive application and AEC-Q101 qualified (TO-220) (TO-262) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Tstg IAR EAR 40 ±20 ±82 ±328 143 1.8 175 −55 to +175 43 185 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(c...