NP89N04MUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0599EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP89N04MUK-S18-AY *1 NP89N04NUK-S18-AY *1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-220 (MP-25K) TO-262 (MP-25SK) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Tstg IAR EAR Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V Ratings 40 20 90 360 147 1.8 175 –55 to 175 37 136 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.02 °C/W 83.3 °C/W R07DS0599EJ0100 Rev.1.00 Jan 11, 2012 Page 1 of 6 NP89N04MUK, NP89N04NUK Electrical Characteristics (TA...