NP89N04PDK
40 V – 90 A – N-channel Power MOS FET Application: Automotive
Preliminary Data Sheet
R07DS1016EJ0200 Rev.2.0...
NP89N04PDK
40 V – 90 A – N-channel Power MOS FET Application: Automotive
Preliminary Data Sheet
R07DS1016EJ0200 Rev.2.00
May 24, 2018
Description
The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP89N04PDK-E1-AY *1 Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP89N04PDK-E2-AY *1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 20 90
360 147 1.8 175 –55 to +175 37 136
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C)*3 Rth(ch-A) *3
1.02 83.3
°C/W °C/W
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 V 0 V *3. Not subject of production test....