Preliminary Data Sheet
NP89N055MUK, NP89N055NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0600EJ0100 Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 4000 pF TYP. (VDS...
