NP90N055VUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0578EJ0200 Rev.2.00
May 24, 2018
Description
The N...
NP90N055VUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0578EJ0200 Rev.2.00
May 24, 2018
Description
The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP90N055VUK-E1-AY *1 Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP90N055VUK-E2-AY *1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-252 (MP-3ZP)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 55 20 90
360 147 1.2 175 –55 to 175 33 108
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C)*3 Rth(ch-A) *3
1.02 125
°C/W °C/W
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V *3 Not subject of production test. Verified by design/characterization.
R07DS0578EJ0200 Rev.2...