1Gb DDR3 SDRAM
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP
Feature
1.5V ± 0.075V & 1.35V -0.067/+0.1V (JED...
Description
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP
Feature
1.5V ± 0.075V & 1.35V -0.067/+0.1V (JEDEC Standard Power Supply)
VDD= VDDQ= 1.35V (1.283~1.45V ) Backward compatible to VDD= VDDQ= 1.5V ±0.075V Supports DDR3L devices to be backward compatible in 1.5V applications
The timing specification of high speed bin is backward compatible with low speed bin
8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9,
10, 11, 12, 13, (14) POSTED CAS ADDITIVE Programmable Additive
Latency: 0, CL-1, CL-2 Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8
8n-bit prefetch architecture Output Driver Impedance Control Differential bidirectional data strobe Write Leveling OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature RoHS Compliance Lead-Free and Halogen-Free Packages:
78-Ball BGA for x8 components 96-Ball BGA for x16 components Operation Temperture Commerical grade (0℃≦TC≦95℃) - BE, CF, DH, EJ, FK Industial grade (-40℃≦TC≦95℃) - CFI, DHI
DCC Version 1.1
01/ 2014
1
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1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP
Table 1: CAS Latency Frequency
-BE*
-CF/CFI*
Speed Bins
DDR3/L-1066
DDR3/L-1333
CL7 CL8
Parameter Clock
Frequency
Min. 30...
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