| Part Number | NTB082N65S3F |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | Power MOSFET |
| Description | SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for... |
| Features |
• 700 V @ TJ = 150°C • Typ. RDS(on) = 70 mW • Ultra Low Gate Charge (Typ. Qg = 81 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Server P... |
| Datasheet | NTB082N65S3F pdf datasheet |
| Part Number | NTB082N65S3F |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for r. |
| Features |
emiconductor
NTB082N65S3F
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS= 20A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=. |
| Datasheet | NTB082N65S3F pdf datasheet |
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