NTBS2D7N06M7

NTBS2D7N06M7 N‐Channel PowerTrench) MOSFET 60 V, 110 A, 2.7 mW Features Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A UIS Capability These Devices are Pb−Free and are RoHS Compliant Applications Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated Tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Drain Current − Continuous (TC = 25°C) ID (VGS = 10) (Note 1) 110 A Pulsed Drain Current (TC = 25°C) See Figure 4 Single Pulse Avalanche Energy (Note 2) EAS Power Dissipation PD Derate Above 25°C 193 mJ 176 W 1.2 W/°C Operating and Storage Temperature Range TJ, TSTG −55 to °C +175 Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 3) RqJC RqJA 0.85 _C/W 43 _C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 50 mH, IAS = 88 A, VDD = 60 V during inductor charging and VDD = 0 V during time in avalanche. 3. RqJA is the sum of the junction−to−case and case−to−ambie...