NTD18N06L, NTDV18N06L
MOSFET – Power, N-Channel, Logic Level, DPAK
18 A, 60 V
Designed for low voltage, high speed swit...
NTD18N06L, NTDV18N06L
MOSFET – Power, N-Channel, Logic Level, DPAK
18 A, 60 V
Designed for low
voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
AEC Q101 Qualified − NTDV18N06L These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Power Supplies Converters Power Motor Controls Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source
Voltage
Drain−to−Gate
Voltage (RGS = 10 MW)
Gate−to−Source
Voltage − Continuous − Non−repetitive (tpv10 ms)
Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS VDGR
VGS VGS
ID ID IDM PD
TJ, Tstg
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 12 A, VDS = 60 Vdc)
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)
EAS
RqJC RqJA RqJA
60 Vdc
60 Vdc
Vdc ±15 ±20
18 10 54
55 0.36 2.1
−55 to +175
72
Adc
Apk W W/°C W °C
mJ
°C/W 2.73 100 71.4
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,...