NTD18N06L

NTD18N06L, NTDV18N06L MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AEC Q101 Qualified − NTDV18N06L These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGS ID ID IDM PD TJ, Tstg Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 12 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) EAS RqJC RqJA RqJA 60 Vdc 60 Vdc Vdc ±15 ±20 18 10 54 55 0.36 2.1 −55 to +175 72 Adc Apk W W/°C W °C mJ °C/W 2.73 100 71.4 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,...