NTD4969N Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
• • • • •
Low RDS(on) to Minimize Conduction Lo...
NTD4969N Power
MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 19 mW @ 4.5 V D ID MAX 41 A
Applications
CPU Power Delivery DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 12.7 9.0 2.56 9.4 6.6 1.38 41 29 26.3 150 40 −55 to +175 24 6.0 18 W A A °C A V/ns mJ W A W A 1 2 3 4 Unit V V A G
S N−CHANNEL
MOSFET 4 4
1
CASE 369AA DPAK (Bent Lead) STYLE 2
2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK)
2 3
1
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain YWW 49 69NG 4 Drain YWW 49 69NG 4 Drain YWW 49 69NG
Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drai...