NTE216 Silicon NPN Transistor High Speed Switch, Core Driver
Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . ...
NTE216 Silicon NPN Transistor High Speed Switch, Core Driver
Absolute Maximum Ratings: Collector–Base
Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter
Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base
Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Maximum Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Cutoff Current DC Current Gain Symbol ICBO hFE Test Conditions VCB = 60V IC = 10mA, VCE = 1V IC = 150mA, VCE = 1V IC = 300mA, VCE = 1V IC = 500mA, VCE = 1V IC = 800mA, VCE = 2V IC = 1A, VCE = 5V Collector–Emitter Saturation
Voltage Base–Emitter Saturation
Voltage Capacitance Turn–Off Time VCE(sat) IC = 10mA VBE(sat) IC = 10mA Cob toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA Min – 30 60 40 35 20 25 – – – – Typ – – – – – – – – – – – Max 1.7 – 150 – – – – 0.25 0.76 1...
