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NTE2353

Silicon NPN Transistor

Description

NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode Features: D High Speed: tf = 100nsec D High Breakdown Voltage: VCBO = 1500V D On–Chip Damper Diode Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

NTE

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