Transistors. NTE2356 Datasheet

NTE2356 Datasheet PDF

Part NTE2356
Description Silicon Complementary Transistors
Feature NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resist.
Manufacture NTE
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NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transist NTE2356 Datasheet




NTE2356
NTE2355 (NPN) & NTE2356 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 10k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 10k, R2 = 10k)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
NTE2355
ICBO
ICEO
IEBO
hFE
fT
VCB = 40V, IE = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10mA
VCE = 10V, IC = 5mA
NTE2356
Output Capacitance
NTE2355
Cob VCB = 10V, f = 1MHz
NTE2356
Min Typ Max Unit
– – 0.1 µA
– – 0.5 µA
170 250 330 µA
50 –
– 250 – MHz
– 200 – MHz
– 3.7 – pF
– 5.5 – pF



NTE2356
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
Input OFF Voltage
Input ON Voltage
Input Resistance
VCE(sat) IC = 10mA, IB = 0.5mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 100µA, RBE =
VI(off) VCE = 5V, IC = 100µA
VI(on) VCE = 200mV, IC = 10mA
R1
0.1 0.3 V
50 – – V
50 – – V
0.8 1.1 1.5 V
1.0 2.0 4.0 V
7.0 10.0 13.0 k
Input Resistance Ratio
R1/R2
0.9 1.0 1.1
Collector
(Output)
Schematic Diagram
Collector
(Output)
Base
(Input)
R1
R2
Base
(Input)
R1
R2
Emitter
(GND)
NPN
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
Emitter
(GND)
PNP
ECB
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max




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