NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)
Description: The NTE236 is a silicon NPN epit...
NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)
Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power
amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base
Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter
Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base
Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PC TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . ....
