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NTE2375 Datasheet

Part Number NTE2375
Manufacturers NTE
Logo NTE
Description N-CHANNEL MOSFET
Datasheet NTE2375 DatasheetNTE2375 Datasheet (PDF)

NTE2375 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE2375   NTE2375






Part Number NTE2379
Manufacturers NTE
Logo NTE
Description N-CHANNEL MOSFET
Datasheet NTE2375 DatasheetNTE2379 Datasheet (PDF)

NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous (VGS = 10V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE2375   NTE2375







Part Number NTE2378
Manufacturers NTE
Logo NTE
Description N-CHANNEL MOSFET
Datasheet NTE2375 DatasheetNTE2378 Datasheet (PDF)

NTE2378 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Low ON–State Resistance D Very High–Speed Switching D Converters Absolute Maximum Ratings: (TA = +25°C) Drain–Sour.

  NTE2375   NTE2375







Part Number NTE2377
Manufacturers NTE
Logo NTE
Description N-Channel Enhancement Mode MOSFET
Datasheet NTE2375 DatasheetNTE2377 Datasheet (PDF)

NTE2377 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Type Package Description: The NTE2377 is an N−Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. D Features: D Low ON−State Resistance D Very High−Speed Switching D Converters G Absolute Maximum R.

  NTE2375   NTE2375







Part Number NTE2376
Manufacturers NTE
Logo NTE
Description N-CHANNEL MOSFET
Datasheet NTE2375 DatasheetNTE2376 Datasheet (PDF)

NTE2376 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE2375   NTE2375







N-CHANNEL MOSFET

NTE2375 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 830mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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