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NTE24 Datasheet

Part Number NTE24
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE24 DatasheetNTE24 Datasheet (PDF)

NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: D High Collector–Emitter Breakdown Voltage: VCEO = 80V D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–B.

  NTE24   NTE24






Part Number NTE2V010
Manufacturers NTE
Logo NTE
Description Metal Oxide Varistors
Datasheet NTE24 DatasheetNTE2V010 Datasheet (PDF)

NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors (MOV) Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents. The NTE 1V Series Varistors have a non–linear voltage/current characteristic as expressed b.

  NTE24   NTE24







Part Number NTE2999
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE24 DatasheetNTE2999 Datasheet (PDF)

NTE2999 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D High Speed Switching D Low On−Resistance D No Secondary Breakdown D Low Driving Power D Avalanche−Proof Applications: D Switching Regulators D UPS (Uninterruptible Power Supply) D DC−DC Converters D G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE24   NTE24







Part Number NTE2998
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE24 DatasheetNTE2998 Datasheet (PDF)

NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . .

  NTE24   NTE24







Part Number NTE2997
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE24 DatasheetNTE2997 Datasheet (PDF)

NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D G S Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Gate−Source Voltage,.

  NTE24   NTE24







Part Number NTE2996
Manufacturers NTE Electronics
Logo NTE Electronics
Description N-Channel MOSFET
Datasheet NTE24 DatasheetNTE2996 Datasheet (PDF)

NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Maximum Ratings: S Drain CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..)).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE24   NTE24







Silicon Complementary Transistors

NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: D High Collector–Emitter Breakdown Voltage: VCEO = 80V D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


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