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NTE240 Datasheet

Part Number NTE240
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE240 DatasheetNTE240 Datasheet (PDF)

NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VC.

  NTE240   NTE240






Part Number NTE249
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE240 DatasheetNTE249 Datasheet (PDF)

NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . ..

  NTE240   NTE240







Part Number NTE248
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE240 DatasheetNTE248 Datasheet (PDF)

NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximu.

  NTE240   NTE240







Part Number NTE247
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE240 DatasheetNTE247 Datasheet (PDF)

NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum R.

  NTE240   NTE240







Part Number NTE246
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE240 DatasheetNTE246 Datasheet (PDF)

NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . ..

  NTE240   NTE240







Part Number NTE245
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE240 DatasheetNTE245 Datasheet (PDF)

NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . .

  NTE240   NTE240







Silicon Complementary Transistors

NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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