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NTE2908 Datasheet

Part Number NTE2908
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2908 DatasheetNTE2908 Datasheet (PDF)

NTE2908 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package Description: The NTE2908 is a Power MOSFET in a TO−220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. D Features: D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1.

  NTE2908   NTE2908






Part Number NTE290A
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE2908 DatasheetNTE290A Datasheet (PDF)

NTE289A (NPN) & NTE290A (PNP) Silicon Complementary Transistors Audio Power Amplifier Features: D High Breakdown Voltage: V(BR)CEO = 80V Min D High Current: IC = 500mA D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE2908   NTE2908







Part Number NTE2909
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2908 DatasheetNTE2909 Datasheet (PDF)

NTE2909 MOSFET N−Channel, Enhancement Mode High Speed Switch Description: The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. Features: D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D.

  NTE2908   NTE2908







Part Number NTE2907
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2908 DatasheetNTE2907 Datasheet (PDF)

NTE2907 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Low Drain−Source ON Resistance D High Forward Transfer Admittance D Low Leakage Current D Applications: D High Current, High Speed Switching Applications D Chopper Regulator D DC−DC Converter D Motor Drive G S Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V .

  NTE2908   NTE2908







Part Number NTE2906
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2908 DatasheetNTE2906 Datasheet (PDF)

NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch (Compl to NTE2998) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode D G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . .

  NTE2908   NTE2908







N-Channel MOSFET

NTE2908 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package Description: The NTE2908 is a Power MOSFET in a TO−220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. D Features: D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25C . . . . . . +100C . . . . . .(V. .G.S. = .. .. 10V), .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202A 143A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 808A Power DDeisrsaitpeaLtiionnea(TrlCy A=b+o2v5eC25),PCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 333W 2.2W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


2020-01-23 : BUT11F    NTE2913    NTE2915    NTE2914    NTE2916    NTE2918    NTE2917    NTE2919    NTE2908    NTE2909   


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