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NTE2911 Datasheet

Part Number NTE2911
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2911 DatasheetNTE2911 Datasheet (PDF)

NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . .

  NTE2911   NTE2911






Part Number NTE2919
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE2911 DatasheetNTE2919 Datasheet (PDF)

NTE2919 MOSFET P−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low ON−Resistance D Ultra High−Speed Switching G D 4V Drive S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −60V Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE2911   NTE2911







Part Number NTE2918
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE2911 DatasheetNTE2918 Datasheet (PDF)

NTE2918 MOSFET P−Ch, Enhancement Mode High Speed Switch TO220 Type Package D Features: D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. = .. .. −10V), . . .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE2911   NTE2911







Part Number NTE2917
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2911 DatasheetNTE2917 Datasheet (PDF)

NTE2917 MOSFET Silicon N−Channel JFET Transistor w/Internal Diode for ECM Impedance Converter Applications TO92S Type Package D Features: D Compact Package D High Forward Transfer Admittance D Low Capacitance D Includes Diode and High Resistance at G − S G S Absolute Maximum Ratings: Drain−to−Source Voltage (VGS = −1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate−to−Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE2911   NTE2911







Part Number NTE2916
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2911 DatasheetNTE2916 Datasheet (PDF)

NTE2916 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D D Advanced Process Technology D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of Paralleling Description: S The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an ext.

  NTE2911   NTE2911







Part Number NTE2915
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2911 DatasheetNTE2915 Datasheet (PDF)

NTE2915 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Low Gate−to−Drain Charge to Reduce Switching Losses D Fully Characterized to Simplify Design Capacitance Including Effective COSS D Fully Characterized Avalanche Voltage and Current Applications: D High Frequency DC−DC Converters D G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. = .. .. 10V), .ID. . ... . . . . . . . .

  NTE2911   NTE2911







N-Channel MOSFET

NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note Continuous . 2), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse (t = 1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48A Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364mJ Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


2020-01-23 : BUT11F    NTE2913    NTE2915    NTE2914    NTE2916    NTE2918    NTE2917    NTE2919    NTE2908    NTE2909   


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