NTE2912 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Advanced Process technology...
NTE2912
MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Advanced Process technology D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated
G
D S
Description: The NTE2912 Power
MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all commercial−industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings:
Continuous
TTCC
= =
+D2ra5i5nCC(uNroretent1()V.G.S. +1005C . . . . . . . . . .
= .. ..
10V), ..... .....
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82A 58A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Power
LDinisesaipraDtieornat(iTnCg
= +255C), Factor . .
.P.D.
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