NTE2950

NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−262 Type Package Features: D Low RDSON Reduces Losses D Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves Switching & EMI Performance D 30V Gate Voltage Rating Improves Robustness D Fully Characterized Avalanche SOA D Applications D Motion Control Applications D High Efficiency Synchronous Rectification in SMPS D Uninterruptible Power Supply D Hard Switched and High Frequency Circuits G S Absolute Maximum Ratings: Continuous TTCC = = +D2ra5inCC(uNroretent1()V.G.S. +100C . . . . . . . . . . = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85A 60A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A MaximuLminePaor wDeerraDtiisnsgipFaaticotnor(T. C. = .. .+.2.5..C. ).,.P. D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350W 2.3W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Single Pulse Avalanche Energy (Thermally Limited, ...