MOSFET. NTE2993 Datasheet


NTE2993 Datasheet PDF


NTE2993


N-Channel MOSFET
NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package

D

Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling

G S

Absolute Maximum Ratings:

Drain−Source Voltage (VGS = 0V, ID = 1mA), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Continuous

TTCC

= =

Drain Current +25C . . . . . . +100C . . . . .

.(V. .G.S. .....

= .. ..

10V), ..... .....

.ID. . ...

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14A . 9A

Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A

MaximuLminePaor wDeerraDtiisnsgipFaaticotnor(T. C.

= ..

.+.2.5..C. ).,.P. D. .

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. . 150W 1.2W/C

Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....



NTE2993
NTE2993
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO3 Type Package
D
Features:
D Repetitive Avalanche Ratings
D Dynamic dv/dt Rating
D Simple Drive Requirements
D Ease of Paralleling
G
S
Absolute Maximum Ratings:
DrainSource Voltage (VGS = 0V, ID = 1mA), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Continuous
TTCC
=
=
Drain Current
+25C . . . . . .
+100C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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14A
. 9A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A
MaximuLminePaor wDeerraDtiisnsgipFaaticotnor(T. C.
=
..
.+.2.5..C. ).,.P. D. .
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. . 150W
1.2W/C
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Peak Diode Recovery (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Lead temperature (During Soldering, .063” (1.6mm) from case, 10sec max), TL . . . . . . . . . +300C
Thermal Resistance, JunctiontoAmbient (Typical Socket Mount), RthJA . . . . . . . . . . . . . . . 30K/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83K/W
Note 1. Repetitive Rating; Pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, Starting TJ = +150C, Peak IL = 14A.
Note 3. ISD 14A, di/dt 145A/s, VDD 400V, TJ +150C.
Rev. 1013

NTE2993
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V
Temperature Coefficient of
Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS Reference to +25C, ID = 1mA
TJ
VGS(th) VDS = VGS, ID = 250A
Zero Gate Voltage Drain Current
IDSS VDS = 320
VGS = 0V, TJ = 125C
OnState Drain Current
ID(on) VDS > ID(on) x RDS(on) max, VGS = 10V
GateSource Leakage Forward
IGSS VGS = 20V
GateSource Leakage Reverse
IGSS VGS = 20V
DrainSource OnState Resistance RDS(on) VGS = 10V, ID = 9A , Note 4
VGS = 10V, ID = 14A, Note 4
Forward Transconductance
gfs ID = 3A, VDS = 10V, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1.0 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
TurnOn Time
td(on) VDD = 200V, ID = 14A, RG = 2.35
Rise Time
tr
TurnOff Time
td(off)
Fall Time
tf
Total Gate Charge
Qg VGS = 10V, ID = 14A, VDS = 200V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
Internal Drain Inductance
LS + LD
Measured between the contact screw on
header that is closer to source and gate
pins and center of die.
400
2.0
15
6.0
52
5.0
25
−−V
0.46 V/C
2600
680
250
6.1
4.0
25
250
100
100
0.3
0.4
35
190
170
130
110
18
65
V
A
A
A
nA
nA
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
SourceDrain Diode Ratings and Characteristics:
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
Forward Turnon Time
IS − − 14 A
ISM Note 1
− − 56 A
VSD TJ = +25C, IS = 14A, VGS = 0V, Note 4
1.7 V
trr
QRR
TVJDD= +2550VC,,NIFot=e144A, dl/dt 100A/s,
− − 1200 ns
− − 250 c
ton
Intrinsic turnon time is negligible. Turnon speed is substantially
controlled by LS + LD.
Note 1. Repetitive Rating; Pulse width limited by maximum junction temperature.
Note 4. Pulse width 300s, Duty Cycle 2%.

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