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NTE2998 Datasheet

Part Number NTE2998
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE2998 DatasheetNTE2998 Datasheet (PDF)

NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . .

  NTE2998   NTE2998






Part Number NTE2999
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2998 DatasheetNTE2999 Datasheet (PDF)

NTE2999 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D High Speed Switching D Low On−Resistance D No Secondary Breakdown D Low Driving Power D Avalanche−Proof Applications: D Switching Regulators D UPS (Uninterruptible Power Supply) D DC−DC Converters D G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE2998   NTE2998







Part Number NTE2997
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE2998 DatasheetNTE2997 Datasheet (PDF)

NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D G S Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Gate−Source Voltage,.

  NTE2998   NTE2998







Part Number NTE2996
Manufacturers NTE Electronics
Logo NTE Electronics
Description N-Channel MOSFET
Datasheet NTE2998 DatasheetNTE2996 Datasheet (PDF)

NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Maximum Ratings: S Drain CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..)).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE2998   NTE2998







Part Number NTE2995
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2998 DatasheetNTE2995 Datasheet (PDF)

NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS(on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC D Lighting D G S Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain−Gate Voltag.

  NTE2998   NTE2998







P-Channel MOSFET

NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m14V Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation (TC = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150 C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 C/W Electrical Characteristics: (TC = +25 C unless otherwise specified) Parameter Symbol Test Conditions Static Ch.


2020-01-23 : BUT11F    NTE2913    NTE2915    NTE2914    NTE2916    NTE2918    NTE2917    NTE2919    NTE2908    NTE2909   


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