NTE3031

NTE3031 Phototransistor Detector NPN–Si, Visible & IR Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Lead temperature (During Soldering, 3 min), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Static Characteristics Collector Dark Current Collector–Emitter Breakdown Voltage Emitter–Collector Breakdown Voltage Saturation Voltage Optical Characteristics Light Current Photo Current Rise Time IL tr VCE = 5V, RL = 100Ω, Note 1 RL = 1000Ω, VCC = 5V, IL = 1mA (Peak) 1 – – 6 – – mA µs ID VCE = 10V – 30 5 – – – – 0.2 100 – – – nA V V V V(BR)CEO IC = 100µA V(...