NTE3035A Phototransistor Detector
Description: The NTE3035A is designed for a wide variety of industrial processing and ...
NTE3035A Phototransistor Detector
Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: D Miniature, Low Profile, Clear Plastic Package D Designed for Automatic Handling and Accurate Positioning D Side Looking, with Molded Lens D High Volume, Economical Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter
Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Lead Temperature (During Soldering, 1/16” from case, 5sec max., Note 2), TL . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Collector Dark Current Collector–Emitter Breakdown
Voltage Capacitance Symbol ID Cce Test Conditions VCE = 10V, H [ 0 VCC = 5V, f = 1MHz Min –...
