NTE595 Silicon Diode, Dual, Common Cathode, High Speed
Description: The NTE595 consists of two silicon diodes in an SOT–...
NTE595 Silicon Diode, Dual, Common Cathode, High Speed
Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse
Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Repetitive Peak Reverse
Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Non–Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Thermal Resistance, Junction–to...
