NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS)
Description: The NTE6403 is a silicon planer, monolithic integ...
NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS)
Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower
voltages. The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is ideally suited for half wave and full wave triggering in low
voltage SCR and TRIAC phase control circuits. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Recurrent Forward Current (PW = 10µs, Duty Cycle = 1%, TA = +25°C) . . . . . . . . . . . . . . . 1A Peak Non–Recurrent Forward Current (PW = 10µs, TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Operating Junction Temperature Range, TJ . . . . . . . ....
