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NTE6412 Datasheet

Part Number NTE6412
Manufacturers NTE Electronics
Logo NTE Electronics
Description Bilateral Trigger Diodes (DIACS)
Datasheet NTE6412 DatasheetNTE6412 Datasheet (PDF)

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum.

  NTE6412   NTE6412






Part Number NTE6419
Manufacturers NTE Electronics
Logo NTE Electronics
Description Bidirectional Thyristor Diodes (SIDAC)
Datasheet NTE6412 DatasheetNTE6419 Datasheet (PDF)

NTE6415 thru NTE6419 Bidirectional Thyristor Diodes (SIDAC) Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on–state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the devic.

  NTE6412   NTE6412







Part Number NTE6415
Manufacturers NTE Electronics
Logo NTE Electronics
Description Bidirectional Thyristor Diodes (SIDAC)
Datasheet NTE6412 DatasheetNTE6415 Datasheet (PDF)

NTE6415 thru NTE6419 Bidirectional Thyristor Diodes (SIDAC) Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on–state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the devic.

  NTE6412   NTE6412







Part Number NTE6411
Manufacturers NTE Electronics
Logo NTE Electronics
Description Bilateral Trigger Diodes (DIACS)
Datasheet NTE6412 DatasheetNTE6411 Datasheet (PDF)

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum.

  NTE6412   NTE6412







Part Number NTE6410
Manufacturers NTE Electronics
Logo NTE Electronics
Description Unijunction Transistor (UJT)
Datasheet NTE6412 DatasheetNTE6410 Datasheet (PDF)

NTE6410 Unijunction Transistor (UJT) Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified) RMS Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE6412   NTE6412







Bilateral Trigger Diodes (DIACS)

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1µF Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above +40°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/°C Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278°C/W Thermal Resistance, Junction–to–Lead (Note 1), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W Lead Temperature (During Soldering, 1/16” (1.59mm) from case, 10sec max), TL . . . . . . . . +23.


2005-05-12 : NTE5586    NTE5587    NTE5588    NTE5589    NTE5590    NTE5591    NTE5592    NTE5593    NTE5597    NTE56   


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