NTE6508 Integrated Circuit CMOS, 1K Static RAM (SRAM)
Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a ...
NTE6508 Integrated Circuit
CMOS, 1K Static RAM (SRAM)
Description: The NTE6508 is a 1024 x 1 fully static
CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowing effecient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. Features: D Low Power Standby: 50µW Max D Low Power Operation: 20mW/MHz Max D Fast Access Time: 300ns Max D Data Retention: 2V Min D TTL Compatible Input/Output D High Output Drive: 2 TTL Loads D On–Chip Address Register Absolute Maximum Ratings: (Note 1) Supply
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V Input, Output or I/O
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND –0.3V to VCC +0.3V Typical Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mA/MHz increase in ICC(OP) Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1925 Gates Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range . . . . ....
