NTE907

NTE907 Integrated Circuit Diode Array Description: The NTE907 consists of six ultra–fast, low capacitance diodes on a common monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a common terminal with the substrate. The NTE907 comes in a 12–Lead TO5 type package. Features: D Excellent Reverse Recovery Time: 1ns typ. D Matched Monolithic Construction: VF matched within 5mV D Low Diode Capacitance: CD = 0.65pF typical at VR = –2V Applications: D Balanced Modulators or Demodulators D Ring Modulators D High Speed Diode Gates D Analog Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any one diode unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Total for device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW For TA > 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 5.7mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Peak Inverse Voltage, PIV D1 – D5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....