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NTHC5513 Datasheet

Part Number NTHC5513
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTHC5513 DatasheetNTHC5513 Datasheet (PDF)

NTHC5513 MOSFET – Power, Complementary ChipFET 20 V, +3.9 A / -3.0 A Features • Complementary N−Channel and P−Channel MOSFET • Small Size, 40% Smaller than TSOP−6 Package • Leadless SMD Package Featuring Complementary Pair • ChipFET Package Provides Great Thermal Characteristics Similar to Larger Packages • Low RDS(on) in a ChipFET Package for High Efficiency Performance • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics • These Devices are P.

  NTHC5513   NTHC5513






Power MOSFET

NTHC5513 MOSFET – Power, Complementary ChipFET 20 V, +3.9 A / -3.0 A Features • Complementary N−Channel and P−Channel MOSFET • Small Size, 40% Smaller than TSOP−6 Package • Leadless SMD Package Featuring Complementary Pair • ChipFET Package Provides Great Thermal Characteristics Similar to Larger Packages • Low RDS(on) in a ChipFET Package for High Efficiency Performance • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Load Switch Applications Requiring Level Shift • DC−DC Conversion Circuits • Drive Small Brushless DC Motors • Designed for Power Management Applications in Portable, Battery Powered Products MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) N−Ch Steady State TA = 25°C TA = 85°C VDSS VGS ID 20 ±12 2.9 2.1 tv5 P−Ch Steady State TA = 25°C TA = 25°C TA = 85°C ID 3.9 −2.2 −1.6 Pulsed Drain Current (Note 1) tv5 N−Ch P−Ch TA = 25°C t = 10 ms t = 10 ms IDM −3.0 12 −9.0 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.1 Unit V V A A A W tv5 Operating Junction and Storage Temperature TA = 25°C TJ, TSTG 2.1 −55 to 150 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If .


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