NTHC5513
MOSFET – Power, Complementary ChipFET
20 V, +3.9 A / -3.0 A
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low RDS(on) in a ChipFET Package for High Efficiency Performance • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• These Devices are P.
Power MOSFET
NTHC5513
MOSFET – Power, Complementary ChipFET
20 V, +3.9 A / -3.0 A
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low RDS(on) in a ChipFET Package for High Efficiency Performance • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
N−Ch Steady State
TA = 25°C TA = 85°C
VDSS VGS ID
20 ±12 2.9 2.1
tv5 P−Ch Steady State
TA = 25°C TA = 25°C TA = 85°C
ID
3.9 −2.2 −1.6
Pulsed Drain Current (Note 1)
tv5 N−Ch P−Ch
TA = 25°C t = 10 ms t = 10 ms
IDM
−3.0 12 −9.0
Power Dissipation (Note 1)
Steady State
TA = 25°C
PD
1.1
Unit V V A
A
A W
tv5 Operating Junction and Storage Temperature
TA = 25°C
TJ, TSTG
2.1 −55 to
150
°C
Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If .