NTHD5905T1

NTHD5905T1 Power MOSFET Dual P−Channel ChipFETt 3.0 Amps, 8 Volts Features Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Applications Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards http://onsemi.com DUAL P−CHANNEL 3.0 AMPS, 8 VOLTS RDS(on) = 90 mW MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 secs State Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) VDS −8.0 VGS "8.0 ID "4.1 "2.9 "3.0 "2.2 IDM "10 IS −1.8 −0.9 Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range PD TJ, Tstg 2.1 1.1 1.1 0.6 −55 to +150 1. Surface Mounted on 1″ x 1″ FR4 Board. Unit V V A A A W °C S1 G1 S2 G2 D1 P−Channel MOSFET D2 P−Channel MOSFET ChipFET CASE 1206A STYLE 2 PIN CONNECTIONS MARKING DIAGRAM D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 1 2 3 4 A9 8 7 6 5 A9 = Specific Device Code ORDERING INFORMATION Device Package Shipping NTHD5905T1 ChipFET 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. XXX 1 Publication Order Number: NTHD5905T1/D NTHD5905T1 THERMAL CHARACTERISTICS Characteristic Symbol Typ Maximum Junction−to−Ambient (Note 2) t v 5 sec Steady State RthJA 50 90 Maximum Junction−...