NTLJD3181PZ
Power MOSFET
−20 V, −4.0 A,Dual P−Channel, ESD, 2x2 mm WDFN Package
Features
• WDFN 2x2 mm Package with Ex...
NTLJD3181PZ
Power
MOSFET
−20 V, −4.0 A,Dual P−Channel, ESD, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
Lowest RDS(on) Solution in 2x2 mm Package Footprint Same as SC−88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ESD Protected This is a Pb−Free Device
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
Li−Ion Battery Charging and Protection Circuits High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
−20
V
Gate−to−Source
Voltage
VGS
±8.0
V
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
−3.2
A
−2.3
t ≤ 5 s TA = 25°C
−4.0
Power Dissipation (Note 1)
Steady
PD
State TA = 25°C
t ≤5 s
1.5
W
2.3
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
TA = 25°C
ID
Steady TA = 85°C
State
TA = 25°C
PD
−2.2
A
−1.6
0.71
W
Pulsed Drain Current
tp = 10 ms
IDM
−16
A
Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
−1.0
A
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board ...
