NTLJS3D0N02P8Z

MOSFET - Power, Single N-Channel, WDFN6 20 V NTLJS3D0N02P8Z Features Small Footprint (4 mm2) for Compact Design Ultra−Low RDS(on) to Minimize Conduction Losses These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications Wireless Charging Power Load Switch Power Management and Protection Battery Management DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Cur- Steady TA = 25°C ID 20.2 A rent RqJA (Notes 1, 3) State TA = 85°C 14.6 Power Dissipation RqJA (Notes 1, 3) TA = 25°C PD 2.40 W Continuous Drain Cur- Steady TA = 25°C ID 12.1 A rent RqJA (Notes 2, 3) State TA = 85°C 8.7 Power Dissipation RqJA (Notes 2, 3) TA = 25°C PD 0.86 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 81 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Ambient − Steady State (Note 1) RqJA 52 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 145 1. Surface−mounted on FR4 board using 1 in...