NTMFS008N12MC

MOSFET - Power, Single N-Channel 120 V, 8.0 mW, 79 A NTMFS008N12MC Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Soft Body Diode Reduces Voltage Ringing These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS Compliant Typical Applications Synchronous Rectification AC−DC and DC−DC Power Supplies AC−DC Adapters (USB PD) SR Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 120 V Gate−to−Source Voltage VGS Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C ID ±20 V 79 A 50 Power Dissipation RqJC (Note 1) Steady TC = 25°C PD State TC = 100°C PD 102 W 40 Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TA = 25°C TA = 100°C ID ID 12 A 8 Power Dissipation RqJA (Notes 1, 2) Steady TA = 25°C PD State TA = 100°C PD 2.7 W 1.1 Pulsed Drain Current TA = 25°C, tp = 100 ms IDM 352 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +150 Source Current (Body Diode) IS 85 A Single Pulse Drain−to−Source Avalanche Energy (IAV = 45 A, L = 0.1 mH) EAS 101 mJ Lead Temperature Soldering Reflow for Solder- TL ing Purposes (1/8″ from case for 10 s) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality...