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NTMFS4C027N

ON Semiconductor

Power MOSFET

NTMFS4C027N Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • ...


ON Semiconductor

NTMFS4C027N

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Description
NTMFS4C027N Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 80°C Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C TC = 25°C TC =80°C Power Dissipation RqJC (Note 1) Pulsed Drain Current Pulsed Source Current (Body Di...




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