DATA SHEET www.onsemi.com
MOSFET - Power, Single N-Channel, SO-8FL
30 V, 46 A
NTMFS4C029N
Features
• Low RDS(on) to ...
DATA SHEET www.onsemi.com
MOSFET - Power, Single N-Channel, SO-8FL
30 V, 46 A
NTMFS4C029N
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant Applications
CPU Power Delivery DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
Gate−to−Source
Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
15.0
A
TA = 80°C
11.2
TA = 25°C
PD
2.49 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
TA = 80°C
22.5
A
16.8
Power Dissipation
TA = 25°C
PD
RqJA ≤ 10 s (Note 1) Steady
Continuous Drain
State TA = 25°C
ID
Current RqJA (Note 2)
TA = 80°C
Power Dissipation RqJA (Note 2)
TA = 25°C
PD
5.6
W
8.2
A
6.2
0.75 W
Continuous Drain Current RqJC (Note 1)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
TC =80°C
TC = 25°C
PD
46
A
34
23.6 W
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
132
A
Current Limited by Package
TA = 25°C
IDmax
80
A
Operating Junction and Storage Temperature TJ, TSTG −55 to °C
Range
+150
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk, L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes (1/8″ from c...
