NTMFS5C410NLT

MOSFET – Power, Single, N-Channel 40 V, 0.82 mW, 330 A NTMFS5C410NLT Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NTMFS5C410NLTWF − Wettable Flank Option for Enhanced Optical Inspection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 330 A 230 167 W 83 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 50 A 35 3.8 W 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 29 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 169 A EAS 706 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady Stat...