NTMS4916N Power MOSFET
Features
30 V, 11.6 A, N−Channel, SO−8
• • • • •
Low RDS(on) to Minimize Conduction Losses Low C...
NTMS4916N Power
MOSFET
Features
30 V, 11.6 A, N−Channel, SO−8
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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V(BR)DSS 30 V RDS(ON) MAX 9 mW @ 10 V 12 mW @ 4.5 V N−Channel ID MAX 11.6 A
Applications
DC−DC Converters Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current Steady State Steady State Steady State Steady State Steady State TA = 25°C TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.4 7.5 1.30 7.8 6.2 0.89 11.6 9.3 1.98 145 −55 to 150 2.5 40.5 W A °C A mJ W A W Unit V V A
D
G S A
MARKING DIAGRAM/ PIN ASSIGNMENT
1
SO−8 CASE 751 STYLE 12
Source Source Source Gate
1 4916N AYWWG G Top View
8
Drain Drain Drain Drain
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 9 Apk, L = 1.0 mH, RG = 25 W) Lead ...