NTMS4916N

NTMS4916N Power MOSFET Features 30 V, 11.6 A, N−Channel, SO−8 Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 9 mW @ 10 V 12 mW @ 4.5 V N−Channel ID MAX 11.6 A Applications DC−DC Converters Printers MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current Steady State Steady State Steady State Steady State Steady State TA = 25°C TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.4 7.5 1.30 7.8 6.2 0.89 11.6 9.3 1.98 145 −55 to 150 2.5 40.5 W A °C A mJ W A W Unit V V A D G S A MARKING DIAGRAM/ PIN ASSIGNMENT 1 SO−8 CASE 751 STYLE 12 Source Source Source Gate 1 4916N AYWWG G Top View 8 Drain Drain Drain Drain TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 9 Apk, L = 1.0 mH, RG = 25 W) Lead ...