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NTTFS080N10G MOSFET Datasheet PDFN-Channel Power MOSFET N-Channel Power MOSFET |
 
 
 
Part Number | NTTFS080N10G |
---|---|
Description | N-Channel Power MOSFET |
Feature | MOSFET - Power, Single N-Channel, m8FL
1 00 V, 72 mW, 16 A
NTTFS080N10G
Featur es
• Wide SOA for Linear Mode Operati on • Low RDS(on) to Minimize Conducti on Losses • High Peak UIS Current Cap ability for Ruggedness • Small Footpr int (3. 3 x 3. 3 mm) for Compact Design â €¢ These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • 48 V Hot Swap System, Load Switch, Soft−Start, E− Fuse MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent . |
Manufacture | ON Semiconductor |
Datasheet |
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Part Number | NTTFS080N10G |
---|---|
Description | N-Channel Power MOSFET |
Feature | MOSFET - Power, Single N-Channel, m8FL
1 00 V, 72 mW, 16 A
NTTFS080N10G
Featur es
• Wide SOA for Linear Mode Operati on • Low RDS(on) to Minimize Conducti on Losses • High Peak UIS Current Cap ability for Ruggedness • Small Footpr int (3. 3 x 3. 3 mm) for Compact Design â €¢ These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • 48 V Hot Swap System, Load Switch, Soft−Start, E− Fuse MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent . |
Manufacture | ON Semiconductor |
Datasheet |
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