NUS6160MN

NUS6160MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit (OVP) with a dual 20 V P−channel power MOSFET. The OVP is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such events, the IC quickly disconnects the input supply from the load, thus protecting it. The integration of the additional transistor and power MOSFET reduces layout space and promotes better charging performance. The IC is optimized for applications that use an external AC−DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. Features Overvoltage Turn−Off Time of Less Than 1.5 ms Undervoltage Lockout Protection; 3.0 V, Nominal High Accuracy Undervoltage Threshold of 5.0% −20 V Integrated P−Channel Power MOSFET Low RDS(on) = 64 mW @ −4.5 V Compact 3.0 x 4.0 mm QFN Package Maximum Solder Reflow Temperature @ 260°C This is a Pb−Free Device Benefits Provide Battery Protection Integrated Solution Offers Cost and Space Savings Integrated Solution Improves System Reliability Optimized for Commercial PMUs from Top Suppliers Applications Portable Computers and PDAs Cell Phones and Handheld Products Digital Cameras http://onsemi.com MARKING DIAGRAM 1 QFN22 CASE 485AT NUS 6160 ALYWG G NUS6160 = Device Code A = Assembly Location L = Wafer Lot ...