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NUS6189MN

ON Semiconductor

Low Profile Overvoltage Protection

NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and...


ON Semiconductor

NUS6189MN

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Description
NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit (OVP) with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low RDS(on) power MOSFET or charging. The OVP is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such events, the IC quickly disconnects the input supply from the load, thus protecting it. The integration of the additional transistor and power MOSFET reduces layout space and promotes better charging performance. The IC is optimized for applications that use an external AC−DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. Features Overvoltage Turn−Off Time of Less Than 1.0 ms Accurate Voltage Threshold of 6.85 V, Nominal Undervoltage Lockout Protection; 2.8 V, Nominal High Accuracy Undervoltage Threshold of 2.0% −30 V Integrated P−Channel Power MOSFET Low RDS(on) = 50 mW @ −4.5 V High Performance −12 V P−Channel Power MOSFET Single−Low Vce(sat) Transistors as Charging Power Mux Compact 3.0 x 4.0 mm QFN Package Maximum Solder Reflow Temperature @ 260°C This is a Pb−Free Device Benefits Provide Battery Protection Integrated Solution Offers Cost and Space Savings Integrated Solution Improves System Reliability Optimized for Commercial PMUs from Top Suppliers Applications Por...




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