MOSFET - SiC Power, Single N-Channel, TO247-4L
650 V, 44 mW, 47 A
NVH4L060N065SC1
Features
• Typ. RDS(on) = 44 mW @ VG...
MOSFET - SiC Power, Single N-Channel, TO247-4L
650 V, 44 mW, 47 A
NVH4L060N065SC1
Features
Typ. RDS(on) = 44 mW @ VGS = 18 V
Typ. RDS(on) = 60 mW @ VGS = 15 V
Ultra Low Gate Charge (QG(tot) = 74 nC) Low Capacitance (Coss = 133 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant
Typical Applications
Automotive On Board Charger Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
650
V
Gate−to−Source
Voltage
VGS −8/+22 V
Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source
Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
ID
State
47
A
Power Dissipation (Note 1)
PD
176 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
ID
State
33
A
Power Dissipation (Note 1)
PD
88
W
Pulsed Drain Current (Note 2)
TC = 25°C
IDM
152
A
Operating Junction and Storage Temperature Range
TJ, Tstg −55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 10.1 A, L = 1 mH) (Note 3)
Maximum Lead Temperature for Soldering (1/8″ from case for 5 s)
IS
35
A
EAS
51
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment imp...