MOSFET - SiC Power, Single N-Channel, TO247-3L
650 V, 19 mW, 99 A
NVHL025N065SC1
Features
• Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Paramete.
SiC MOSFET
MOSFET - SiC Power, Single N-Channel, TO247-3L
650 V, 19 mW, 99 A
NVHL025N065SC1
Features
• Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
650
V
Gate−to−Source Voltage
VGS −8/+22 V
Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
ID
State
99
A
Power Dissipation (Note 1)
PD
348 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
ID
State
70
A
Power Dissipation (Note 1)
PD
174 W
Pulsed Drain Current (Note 2)
TC = 25°C
IDM
323
A
Operating Junction and Storage Temperature Range
TJ, Tstg −55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11.2 A, L = 1 mH) (Note 3)
Maximum Lead Temperature for Soldering (1/8″ from case for 5 s)
IS
75
A
EAS
62
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment imp.