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NVHL025N065SC1 Datasheet

Part Number NVHL025N065SC1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description SiC MOSFET
Datasheet NVHL025N065SC1 DatasheetNVHL025N065SC1 Datasheet (PDF)

MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Paramete.

  NVHL025N065SC1   NVHL025N065SC1






SiC MOSFET

MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady TC = 25°C ID State 99 A Power Dissipation (Note 1) PD 348 W Continuous Drain Current (Note 1) Steady TC = 100°C ID State 70 A Power Dissipation (Note 1) PD 174 W Pulsed Drain Current (Note 2) TC = 25°C IDM 323 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11.2 A, L = 1 mH) (Note 3) Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) IS 75 A EAS 62 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment imp.


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