NVMD6N03R2

NTMD6N03R2, NVMD6N03R2 MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 6 A Features Designed for use in low voltage, high speed switching applications Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.024 W, VGS = 10 V (Typ) − RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC−8 Surface Mount Package Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery AEC Q101 Qualified − NVMD6N03R2 These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Converters Computers Printers Cellular and Cordless Phones Disk Drives and Tape Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg 30 "20 6.0 30 2.0 1.29 −55 to +150 Unit Volts Volts Adc Apk Watts °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) EAS RqJA 325 mJ °C/W 62.5 97 Maximum Lead Temperature for Soldering Purposes for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stre...