MOSFET – Power, Single N-Channel
100 V, 23 mW, 31 A
NVMFS021N10MCL
Features
• Small Footprint (5x6 mm) for Compact De...
MOSFET – Power, Single N-Channel
100 V, 23 mW, 31 A
NVMFS021N10MCL
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFWS021N10MCL − Wettable Flank Option for Enhanced
Optical Inspection
AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
100
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
31
A
22
Power Dissipation RqJC (Note 1)
Continuous Drain Current RqJA (Notes 1, 2, 3)
TC = 25°C
PD
TC = 100°C
Steady TA = 25°C
ID
State
TA = 100°C
ID
49
W
24
8.4
A
5.9
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
PD
TA = 100°C
3.6
W
1.8
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
159
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +175
Source Current (Body Diode
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.4 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
37
A
EAS
179 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter...