MOSFET – Power, Single N-Channel
100 V, 26 mW, 28 A
NVMFS027N10MCL
Features
• Small Footprint (5x6 mm) for Compact Desi...
MOSFET – Power, Single N-Channel
100 V, 26 mW, 28 A
NVMFS027N10MCL
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable NVMFWS027N10MCL − Wettable Flank Products These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
100
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
28
A
20
46
W
23
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
7.9
A
5.6
3.5
W
1.8
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
137
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.3 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
35
A
EAS
414 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case ...