NVMFS040N10MCL

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 38 mW, 21 A NVMFS040N10MCL V(BR)DSS 100 V RDS(ON) MAX 38 mW @ 10 V 53 mW @ 4.5 V ID MAX 21 A D (5,6) Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable NVMFWS040N10MCL − Wettable Flanks Product These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 1) Steady TC = 100°C Power Dissipation RqJC (Note 1) State TC = 25°C PD TC = 100°C 21 A 15 36 W 18 Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 6.5 A 4.6 3.5 W 1.7 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 94 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (IL(pk) = 0.9 A) Lead Temperature Soldering Reflow for Solder- TL ing Purposes (1/8″ from case for 10 s) 28 A 109 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device ...