NVMFS5A140PLZ

NVMFS5A140PLZ MOSFET – Power, Single P-Channel -40 V, -140 A, 4.2 mW Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com VDSS −40 V RDS(ON) MAX 4.2 mW @ −10 V 7.2 mW @ −4.5 V ID MAX −140 A SPECIFICATION MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Notes 1, 2, 3) Symbol Parameter Value Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain, C(Nuorrteesnt1R, 3qJ)C, Steady State TC = 25°C −40 ±20 −140 V V A D (5) G (4) 1: Source 2: Source 3: Source 4: Gate 5: Drain S (1,2,3) P-CHANNEL MOSFET PD Power Dissipation RqJC (Note 1) TC = 25°C 200 ID Continuous Drain: Steady TA = 25°C −20 C(Nuorrteesnt1R, 2qJ,A3) State W A DFN5 (SO−8FL) PD Power Dissipation RqJA (Note 1, 2) TA = 25°C 3.8 W IDP Pulsed Drain Current PW ≤ 10 ms, duty cycle ≤ 1% −560 A TJ, TSTG Operating Junction and Storage Temperature −55 to +175 °C IS Source Current (Body Diode) EAS Single Pulse Drain to Source Avalanche Energy (L= 1.0 mH, IL(pk) = −29 A) TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) −140 420 A mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occu...